Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / VF20120C-E3/4W
Manufacturer Part Number | VF20120C-E3/4W |
---|---|
Future Part Number | FT-VF20120C-E3/4W |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TMBS® |
VF20120C-E3/4W Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 120V |
Current - Average Rectified (Io) (per Diode) | 10A |
Voltage - Forward (Vf) (Max) @ If | 900mV @ 10A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 700µA @ 120V |
Operating Temperature - Junction | -40°C ~ 150°C |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package | ITO-220AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VF20120C-E3/4W Weight | Contact Us |
Replacement Part Number | VF20120C-E3/4W-FT |
BAT54C-BO-E3-18
Vishay Semiconductor Diodes Division
BAT54C-BO-G3-18
Vishay Semiconductor Diodes Division
BAT54C-BO-HE3-18
Vishay Semiconductor Diodes Division
BAT54C-E3-08
Vishay Semiconductor Diodes Division
BAT54C-E3-18
Vishay Semiconductor Diodes Division
BAT54C-G3-08
Vishay Semiconductor Diodes Division
BAT54C-G3-18
Vishay Semiconductor Diodes Division
BAT54C-HE3-18
Vishay Semiconductor Diodes Division
BAT54S-E3-18
Vishay Semiconductor Diodes Division
BAT54S-G3-08
Vishay Semiconductor Diodes Division
AT40K40LV-3BQC
Microchip Technology
A1225A-PQG100I
Microsemi Corporation
XC2V1000-5FG256I
Xilinx Inc.
APA600-FG256
Microsemi Corporation
EP1S25B672C7N
Intel
EP1S20F484C6N
Intel
EP4SGX290FH29C3N
Intel
XC2VP7-5FF672C
Xilinx Inc.
A40MX04-3PLG84
Microsemi Corporation
LFE2M35SE-5F484I
Lattice Semiconductor Corporation