Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR511000L
Manufacturer Part Number | UNR511000L |
---|---|
Future Part Number | FT-UNR511000L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UNR511000L Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SMini3-G1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR511000L Weight | Contact Us |
Replacement Part Number | UNR511000L-FT |
DTC144WKAT146
Rohm Semiconductor
DTC314TKT146
Rohm Semiconductor
DTC363EKT146
Rohm Semiconductor
DTC363TKT146
Rohm Semiconductor
DTC614TKT146
Rohm Semiconductor
DTD122JKT146
Rohm Semiconductor
DTD133HKT146
Rohm Semiconductor
DTD143TKT146
Rohm Semiconductor
UP0KG8D00L
Panasonic Electronic Components
DRA9143X0L
Panasonic Electronic Components
A3P030-1QNG68
Microsemi Corporation
M2GL050S-1FGG484I
Microsemi Corporation
LFE2-70E-5F900I
Lattice Semiconductor Corporation
10M50DAF256C6GES
Intel
5SGSMD4K3F40I3N
Intel
XC7VX415T-3FFG1157E
Xilinx Inc.
XC6VLX550T-2FFG1760C
Xilinx Inc.
LCMXO2-4000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
EP20K100EQC240-1N
Intel