Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR412200A
Manufacturer Part Number | UNR412200A |
---|---|
Future Part Number | FT-UNR412200A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UNR412200A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | 3-SSIP |
Supplier Device Package | NS-A1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR412200A Weight | Contact Us |
Replacement Part Number | UNR412200A-FT |
UNR521V00L
Panasonic Electronic Components
UNR521W00L
Panasonic Electronic Components
UNR521WG0L
Panasonic Electronic Components
UNR52A0G0L
Panasonic Electronic Components
UNR52A1G0L
Panasonic Electronic Components
UNR52A2G0L
Panasonic Electronic Components
UNR52A4G0L
Panasonic Electronic Components
UNR52A5G0L
Panasonic Electronic Components
UNR52AEG0L
Panasonic Electronic Components
UNR52ALG0L
Panasonic Electronic Components
AGLN010V5-UCG36
Microsemi Corporation
LFE2M100E-6F1152C
Lattice Semiconductor Corporation
AGL060V5-VQG100
Microsemi Corporation
10M25DCF484I7G
Intel
5SGXEB6R2F40C3
Intel
5SGXMA7H2F35C2LN
Intel
EP3SL150F1152C2
Intel
A1020B-PL44I
Microsemi Corporation
XC4VLX160-11FF1148C
Xilinx Inc.
EPF8452AQC160-3AC
Intel