Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR411100A
Manufacturer Part Number | UNR411100A |
---|---|
Future Part Number | FT-UNR411100A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UNR411100A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | 3-SSIP |
Supplier Device Package | NS-B1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR411100A Weight | Contact Us |
Replacement Part Number | UNR411100A-FT |
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