Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / UMH2N-TP
Manufacturer Part Number | UMH2N-TP |
---|---|
Future Part Number | FT-UMH2N-TP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UMH2N-TP Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UMH2N-TP Weight | Contact Us |
Replacement Part Number | UMH2N-TP-FT |
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