Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM60NB190CI C0G
Manufacturer Part Number | TSM60NB190CI C0G |
---|---|
Future Part Number | FT-TSM60NB190CI C0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TSM60NB190CI C0G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1273pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 33.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM60NB190CI C0G Weight | Contact Us |
Replacement Part Number | TSM60NB190CI C0G-FT |
SSM6J511NU,LF
Toshiba Semiconductor and Storage
SSM6J501NU,LF
Toshiba Semiconductor and Storage
SSM6J502NU,LF
Toshiba Semiconductor and Storage
SSM6J503NU,LF
Toshiba Semiconductor and Storage
SSM6J505NU,LF
Toshiba Semiconductor and Storage
SSM6J507NU,LF
Toshiba Semiconductor and Storage
SSM6K504NU,LF
Toshiba Semiconductor and Storage
SSM6K513NU,LF
Toshiba Semiconductor and Storage
IRLD120PBF
Vishay Siliconix
IRFD110PBF
Vishay Siliconix
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel