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Taiwan Semiconductor Corporation TSM60NB099PW C1G

Name: TSM60NB099PW C1G
Brand: Taiwan Semiconductor Corporation
SKU: TSM60NB099PW C1G
Price: 5.616 USD
Availability: InStock
Rating: 4.7 (361 reviews)

MFG Part Number: TSM60NB099PW C1G

Available Quantity: 31630 Pieces

Reference Price: USD 5.616

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Taiwan Semiconductor Corporation

Brief Description: - MOSFET N-CHANNEL 600V 38A TO247

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TSM60NB099PW C1G.pdf

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TSM60NB099PW C1G Specifications

Manufacturer Part Number	TSM60NB099PW C1G
Future Part Number	FT-TSM60NB099PW C1G
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	-
TSM60NB099PW C1G Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99 mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2587pF @ 100V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TSM60NB099PW C1G Weight	Contact Us
Replacement Part Number	TSM60NB099PW C1G-FT

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