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TSM60NB099PW C1G Image

Taiwan Semiconductor Corporation TSM60NB099PW C1G

MFG Part Number
TSM60NB099PW C1G
Available Quantity
31630 Pieces
Reference Price
USD 5.616
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
- MOSFET N-CHANNEL 600V 38A TO247
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TSM60NB099PW C1G.pdf
TSM60NB099PW C1G Image

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TSM60NB099PW C1G Specifications

Manufacturer Part Number TSM60NB099PW C1G
Future Part Number FT-TSM60NB099PW C1G
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
TSM60NB099PW C1G Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TSM60NB099PW C1G Weight Contact Us
Replacement Part Number TSM60NB099PW C1G-FT

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