Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM60NB041PW C1G
Manufacturer Part Number | TSM60NB041PW C1G |
---|---|
Future Part Number | FT-TSM60NB041PW C1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TSM60NB041PW C1G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 21.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6120pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 446W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM60NB041PW C1G Weight | Contact Us |
Replacement Part Number | TSM60NB041PW C1G-FT |
DMPH4015SSS-13
Diodes Incorporated
DMPH4015SSSQ-13
Diodes Incorporated
DMS3014SSS-13
Diodes Incorporated
DMS3015SSS-13
Diodes Incorporated
DMT10H010LSS-13
Diodes Incorporated
DMT10H015LSS-13
Diodes Incorporated
DMT6009LSS-13
Diodes Incorporated
DMT68M8LSS-13
Diodes Incorporated
DMT8012LSS-13
Diodes Incorporated
DI9405T
Diodes Incorporated
LFXP6E-3TN144C
Lattice Semiconductor Corporation
EX64-TQG100I
Microsemi Corporation
XCV1000E-8FG900C
Xilinx Inc.
A3P400-1FGG484I
Microsemi Corporation
A3P600-1FG256I
Microsemi Corporation
EP3SE50F484I3
Intel
EP2AGX125DF25C5N
Intel
5SGXMA7N2F45I2N
Intel
5SGXMA5H2F35C2LN
Intel
EP3SL150F780C4
Intel