Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / TS13002ACT A3G
Manufacturer Part Number | TS13002ACT A3G |
---|---|
Future Part Number | FT-TS13002ACT A3G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TS13002ACT A3G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 300mA |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 200mA |
Current - Collector Cutoff (Max) | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 10V |
Power - Max | 600mW |
Frequency - Transition | 4MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TS13002ACT A3G Weight | Contact Us |
Replacement Part Number | TS13002ACT A3G-FT |
2SC2655-O(ND2,AF)
Toshiba Semiconductor and Storage
2SC2655-O(TE6,F,M)
Toshiba Semiconductor and Storage
2SC2655-O,F(J
Toshiba Semiconductor and Storage
2SC2655-Y(6MBH1,AF
Toshiba Semiconductor and Storage
2SC2655-Y(HIT,F,M)
Toshiba Semiconductor and Storage
2SC2655-Y(T6CANOFM
Toshiba Semiconductor and Storage
2SC2655-Y(T6CN,A,F
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND1,AF
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND2,AF
Toshiba Semiconductor and Storage
2SC2655-Y(T6ND3,AF
Toshiba Semiconductor and Storage
EP2C8T144I8
Intel
LCMXO2280E-4TN144C
Lattice Semiconductor Corporation
XC6SLX75-3CSG484C
Xilinx Inc.
XC3S700A-4FG400I
Xilinx Inc.
LFE3-17EA-7LFTN256C
Lattice Semiconductor Corporation
A3PN060-ZVQG100I
Microsemi Corporation
EPF10K50EFC256-2
Intel
5SGXEA7H3F35I3LN
Intel
XC2V2000-5BG575I
Xilinx Inc.
EPF6016QC208-3
Intel