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Toshiba Semiconductor and Storage TPW1R306PL,L1Q

MFG Part Number
TPW1R306PL,L1Q
Available Quantity
74060 Pieces
Reference Price
USD 1.12
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
U-MOSIX-H X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TPW1R306PL,L1Q.pdf
TPW1R306PL,L1Q Image

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TPW1R306PL,L1Q Specifications

Manufacturer Part Number TPW1R306PL,L1Q
Future Part Number FT-TPW1R306PL,L1Q
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series U-MOSIX-H
TPW1R306PL,L1Q Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TPW1R306PL,L1Q Weight Contact Us
Replacement Part Number TPW1R306PL,L1Q-FT

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