Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPN7R506NH,L1Q
Manufacturer Part Number | TPN7R506NH,L1Q |
---|---|
Future Part Number | FT-TPN7R506NH,L1Q |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | U-MOSVIII-H |
TPN7R506NH,L1Q Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 42W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN7R506NH,L1Q Weight | Contact Us |
Replacement Part Number | TPN7R506NH,L1Q-FT |
TK8A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK12A60U(Q,M)
Toshiba Semiconductor and Storage
TK3A60DA(Q,M)
Toshiba Semiconductor and Storage
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A10K3,S5Q
Toshiba Semiconductor and Storage
2SK3565(Q,M)
Toshiba Semiconductor and Storage
2SK3868(Q,M)
Toshiba Semiconductor and Storage
2SK4016(Q)
Toshiba Semiconductor and Storage
TK10A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK10A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
XC2V250-5FG256I
Xilinx Inc.
M2GL050-FGG484I
Microsemi Corporation
A3P1000-FGG484T
Microsemi Corporation
APA1000-PQ208M
Microsemi Corporation
LCMXO3L-9400C-6BG484C
Lattice Semiconductor Corporation
5SGXEA5K3F35C2L
Intel
XC5VLX50-2FFG1153C
Xilinx Inc.
XC6VLX550T-2FFG1759C
Xilinx Inc.
XCKU035-L1SFVA784I
Xilinx Inc.
5SGXMA3H1F35C2LN
Intel