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Toshiba Semiconductor and Storage TPN2R805PL,L1Q

Name: TPN2R805PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN2R805PL,L1Q
Price: 0.32256 USD
Availability: InStock
Rating: 4.7 (74 reviews)

MFG Part Number: TPN2R805PL,L1Q

Available Quantity: 71770 Pieces

Reference Price: USD 0.32256

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSIX-H X35 PB-F POWER MOSFET TRANSISTOR

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPN2R805PL,L1Q.pdf

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TPN2R805PL,L1Q Specifications

Manufacturer Part Number	TPN2R805PL,L1Q
Future Part Number	FT-TPN2R805PL,L1Q
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSIX-H
TPN2R805PL,L1Q Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45V
Current - Continuous Drain (Id) @ 25°C	139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3.2nF @ 22.5V
FET Feature	-
Power Dissipation (Max)	2.67W (Ta), 104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPN2R805PL,L1Q Weight	Contact Us
Replacement Part Number	TPN2R805PL,L1Q-FT

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