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Toshiba Semiconductor and Storage TPN2R503NC,L1Q

Name: TPN2R503NC,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN2R503NC,L1Q
Price: 0.4368 USD
Availability: InStock
Rating: 4.5 (727 reviews)

MFG Part Number: TPN2R503NC,L1Q

Available Quantity: 38700 Pieces

Reference Price: USD 0.4368

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSVIII MOSFET N CH 30V 40A 8TSON-ADV

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPN2R503NC,L1Q.pdf

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TPN2R503NC,L1Q Specifications

Manufacturer Part Number	TPN2R503NC,L1Q
Future Part Number	FT-TPN2R503NC,L1Q
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSVIII
TPN2R503NC,L1Q Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2230pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 35W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPN2R503NC,L1Q Weight	Contact Us
Replacement Part Number	TPN2R503NC,L1Q-FT

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