Home / Products / Circuit Protection / TVS - Diodes / TPD1E10B06DPYR
Manufacturer Part Number | TPD1E10B06DPYR |
---|---|
Future Part Number | FT-TPD1E10B06DPYR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TPD1E10B06DPYR Status (Lifecycle) | In Stock |
Part Status | Active |
Type | Zener |
Unidirectional Channels | - |
Bidirectional Channels | 1 |
Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
Voltage - Breakdown (Min) | 6V |
Voltage - Clamping (Max) @ Ipp | 14V |
Current - Peak Pulse (10/1000µs) | 5A (8/20µs) |
Power - Peak Pulse | 90W |
Power Line Protection | No |
Applications | General Purpose |
Capacitance @ Frequency | - |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B06DPYR Weight | Contact Us |
Replacement Part Number | TPD1E10B06DPYR-FT |
DF2S30CT,L3F
Toshiba Semiconductor and Storage
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
DF2B12M1CT(TPL3)
Toshiba Semiconductor and Storage
DF2B5M4CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8UCT,L3F
Toshiba Semiconductor and Storage
DF2S8.2CT,L3F
Toshiba Semiconductor and Storage
DF2S24UCT,L3F
Toshiba Semiconductor and Storage
DF2S20CT,L3F
Toshiba Semiconductor and Storage
DF2S5.6CT,L3F
Toshiba Semiconductor and Storage
DF2S6.2CT,L3F
Toshiba Semiconductor and Storage
A54SX08-TQ144
Microsemi Corporation
XC3S200-5FTG256C
Xilinx Inc.
XC7A100T-2FGG676C
Xilinx Inc.
MPF500T-1FCG1152E
Microsemi Corporation
5CGXFC4C6F27C6N
Intel
EP1K100FC256-3N
Intel
A54SX16A-2TQG100
Microsemi Corporation
LCMXO2-7000ZE-2FTG256C
Lattice Semiconductor Corporation
EP20K600CB652C8
Intel
EP20K60EQC208-1X
Intel