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Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M

Name: TPCF8B01(TE85L,F,M
Brand: Toshiba Semiconductor and Storage
SKU: TPCF8B01(TE85L,F,M
Availability: InStock
Rating: 4.8 (28 reviews)

MFG Part Number: TPCF8B01(TE85L,F,M

Available Quantity: 31610 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSIII MOSFET P-CH 20V 2.7A VS-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPCF8B01(TE85L,F,M.pdf

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TPCF8B01(TE85L,F,M Specifications

Manufacturer Part Number	TPCF8B01(TE85L,F,M
Future Part Number	FT-TPCF8B01(TE85L,F,M
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSIII
TPCF8B01(TE85L,F,M Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	110 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	330mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-8 (2.9x1.5)
Package / Case	8-SMD, Flat Lead
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPCF8B01(TE85L,F,M Weight	Contact Us
Replacement Part Number	TPCF8B01(TE85L,F,M-FT

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