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Toshiba Semiconductor and Storage TPC8A05-H(TE12L,QM

Name: TPC8A05-H(TE12L,QM
Brand: Toshiba Semiconductor and Storage
SKU: TPC8A05-H(TE12L,QM
Availability: InStock
Rating: 4.8 (499 reviews)

MFG Part Number: TPC8A05-H(TE12L,QM

Available Quantity: 65520 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSV-H MOSFET N-CH 30V 10A 8SOP

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPC8A05-H(TE12L,QM.pdf

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TPC8A05-H(TE12L,QM Specifications

Manufacturer Part Number	TPC8A05-H(TE12L,QM
Future Part Number	FT-TPC8A05-H(TE12L,QM
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSV-H
TPC8A05-H(TE12L,QM Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13.3 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 10V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPC8A05-H(TE12L,QM Weight	Contact Us
Replacement Part Number	TPC8A05-H(TE12L,QM-FT

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