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Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M)

Name: TPC8110(TE12L,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TPC8110(TE12L,Q,M)
Availability: InStock
Rating: 4.9 (668 reviews)

MFG Part Number: TPC8110(TE12L,Q,M)

Available Quantity: 64320 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSIII MOSFET P-CH 40V 8A SOP8 2-6J1B

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPC8110(TE12L,Q,M).pdf

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TPC8110(TE12L,Q,M) Specifications

Manufacturer Part Number	TPC8110(TE12L,Q,M)
Future Part Number	FT-TPC8110(TE12L,Q,M)
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSIII
TPC8110(TE12L,Q,M) Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	25 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 10V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPC8110(TE12L,Q,M) Weight	Contact Us
Replacement Part Number	TPC8110(TE12L,Q,M)-FT

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