Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPC8109(TE12L)
Manufacturer Part Number | TPC8109(TE12L) |
---|---|
Future Part Number | FT-TPC8109(TE12L) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TPC8109(TE12L) Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP (5.5x6.0) |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPC8109(TE12L) Weight | Contact Us |
Replacement Part Number | TPC8109(TE12L)-FT |
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