Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TP2540N3-G
Manufacturer Part Number | TP2540N3-G |
---|---|
Future Part Number | FT-TP2540N3-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TP2540N3-G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25°C | 86mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 25 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 740mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TP2540N3-G Weight | Contact Us |
Replacement Part Number | TP2540N3-G-FT |
IRF5806
Infineon Technologies
IRF5806TRPBF
Infineon Technologies
SI3443DVTRPBF
Infineon Technologies
SI3493DDV-T1-GE3
Vishay Siliconix
TPC6006-H(TE85L,F)
Toshiba Semiconductor and Storage
TPC6008-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6009-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6011(TE85L,F,M)
Toshiba Semiconductor and Storage
TPC6012(TE85L,F,M)
Toshiba Semiconductor and Storage
M2GL025-1FG484I
Microsemi Corporation
APA600-BG456M
Microsemi Corporation
APA450-FG256
Microsemi Corporation
A3P400-1FG256
Microsemi Corporation
XC2V4000-4FFG1152I
Xilinx Inc.
LFE2M20E-6FN256I
Lattice Semiconductor Corporation
LCMXO2-1200UHC-4FTG256I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6MG132C
Lattice Semiconductor Corporation
EP3SE110F780C4L
Intel
10CL080YF780C6G
Intel