Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / TN2907A_D26Z
Manufacturer Part Number | TN2907A_D26Z |
---|---|
Future Part Number | FT-TN2907A_D26Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TN2907A_D26Z Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 625mW |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Supplier Device Package | TO-226 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN2907A_D26Z Weight | Contact Us |
Replacement Part Number | TN2907A_D26Z-FT |
PHE13003A,126
WeEn Semiconductors
PHE13003A,412
WeEn Semiconductors
PHE13003C,412
WeEn Semiconductors
PN100
ON Semiconductor
PN200
ON Semiconductor
PN200A_J18Z
ON Semiconductor
PN2222
ON Semiconductor
PN2222A,116
NXP USA Inc.
PN2222A,126
NXP USA Inc.
PN2222AG
ON Semiconductor
LCMXO2-1200ZE-1TG100CR1
Lattice Semiconductor Corporation
M1A3P1000-2FGG484
Microsemi Corporation
A3P1000-FG256
Microsemi Corporation
A3P600-2PQG208I
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
5SGSED8K3F40C2LN
Intel
EP3SE80F1152I3
Intel
XA7A50T-1CSG324I
Xilinx Inc.
EPF10K200SBC356-1X
Intel