Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TN0606N3-G
Manufacturer Part Number | TN0606N3-G |
---|---|
Future Part Number | FT-TN0606N3-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TN0606N3-G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 750mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN0606N3-G Weight | Contact Us |
Replacement Part Number | TN0606N3-G-FT |
IRF5802TR
Infineon Technologies
IRF5803
Infineon Technologies
IRF5803TR
Infineon Technologies
IRF5804
Infineon Technologies
IRF5804TR
Infineon Technologies
IRF5804TRPBF
Infineon Technologies
IRF5805
Infineon Technologies
IRF5805TR
Infineon Technologies
IRF5805TRPBF
Infineon Technologies
IRF5806
Infineon Technologies