Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TN0106N3-G
Manufacturer Part Number | TN0106N3-G |
---|---|
Future Part Number | FT-TN0106N3-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TN0106N3-G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN0106N3-G Weight | Contact Us |
Replacement Part Number | TN0106N3-G-FT |
TPC6107(TE85L,F,M)
Toshiba Semiconductor and Storage
TPC6109-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6110(TE85L,F,M)
Toshiba Semiconductor and Storage
TPC6111(TE85L,F,M)
Toshiba Semiconductor and Storage
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage
FDB8444TS
ON Semiconductor
BS170
ON Semiconductor
BS250P
Diodes Incorporated
ZVP3306A
Diodes Incorporated
ZVNL110A
Diodes Incorporated
A3PN015-1QNG68I
Microsemi Corporation
A1415A-PQ100I
Microsemi Corporation
M2GL025S-1VF400I
Microsemi Corporation
A10V20B-PL68C
Microsemi Corporation
EP4S100G3F45I3N
Intel
XC4028XL-09HQ208C
Xilinx Inc.
XC2VP2-6FFG672C
Xilinx Inc.
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP3SE80F780C4
Intel
EPF10K30AQC208-1N
Intel