Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TN0106N3-G-P013
Manufacturer Part Number | TN0106N3-G-P013 |
---|---|
Future Part Number | FT-TN0106N3-G-P013 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TN0106N3-G-P013 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN0106N3-G-P013 Weight | Contact Us |
Replacement Part Number | TN0106N3-G-P013-FT |
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