Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK9A60D(STA4,Q,M)
Manufacturer Part Number | TK9A60D(STA4,Q,M) |
---|---|
Future Part Number | FT-TK9A60D(STA4,Q,M) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | π-MOSVII |
TK9A60D(STA4,Q,M) Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 830 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK9A60D(STA4,Q,M) Weight | Contact Us |
Replacement Part Number | TK9A60D(STA4,Q,M)-FT |
TK40E10N1,S1X
Toshiba Semiconductor and Storage
TK72E08N1,S1X
Toshiba Semiconductor and Storage
TK16E60W,S1VX
Toshiba Semiconductor and Storage
TK30E06N1,S1X
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Toshiba Semiconductor and Storage
TK14E65W,S1X
Toshiba Semiconductor and Storage
TK10E60W,S1VX
Toshiba Semiconductor and Storage
TK12E60W,S1VX
Toshiba Semiconductor and Storage
TK16E60W5,S1VX
Toshiba Semiconductor and Storage
TK17E65W,S1X
Toshiba Semiconductor and Storage
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation