Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK9A55DA(STA4,Q,M)
Manufacturer Part Number | TK9A55DA(STA4,Q,M) |
---|---|
Future Part Number | FT-TK9A55DA(STA4,Q,M) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | π-MOSVII |
TK9A55DA(STA4,Q,M) Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 550V |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 860 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK9A55DA(STA4,Q,M) Weight | Contact Us |
Replacement Part Number | TK9A55DA(STA4,Q,M)-FT |
TK22E10N1,S1X
Toshiba Semiconductor and Storage
TK40E10N1,S1X
Toshiba Semiconductor and Storage
TK72E08N1,S1X
Toshiba Semiconductor and Storage
TK16E60W,S1VX
Toshiba Semiconductor and Storage
TK30E06N1,S1X
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Toshiba Semiconductor and Storage
TK14E65W,S1X
Toshiba Semiconductor and Storage
TK10E60W,S1VX
Toshiba Semiconductor and Storage
TK12E60W,S1VX
Toshiba Semiconductor and Storage
TK16E60W5,S1VX
Toshiba Semiconductor and Storage
XCVU080-2FFVD1517E
Xilinx Inc.
AGL030V2-CSG81
Microsemi Corporation
MPF300T-1FCG484I
Microsemi Corporation
5SGXMA5N2F40C2LN
Intel
5SGXMA7N3F45I3LN
Intel
5SGXEB6R3F43C2L
Intel
XC2VP7-7FF672C
Xilinx Inc.
XC7A12T-1CPG238C
Xilinx Inc.
XC7S25-2CSGA324I
Xilinx Inc.
LFE2M50SE-6FN484I
Lattice Semiconductor Corporation