Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK8Q60W,S1VQ
Manufacturer Part Number | TK8Q60W,S1VQ |
---|---|
Future Part Number | FT-TK8Q60W,S1VQ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | DTMOSIV |
TK8Q60W,S1VQ Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Stub Leads, IPak |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK8Q60W,S1VQ Weight | Contact Us |
Replacement Part Number | TK8Q60W,S1VQ-FT |
TK17E65W,S1X
Toshiba Semiconductor and Storage
TK20E60W,S1VX
Toshiba Semiconductor and Storage
TK25E60X,S1X
Toshiba Semiconductor and Storage
TK25E60X5,S1X
Toshiba Semiconductor and Storage
TK31E60W,S1VX
Toshiba Semiconductor and Storage
TK31E60X,S1X
Toshiba Semiconductor and Storage
TK35E08N1,S1X
Toshiba Semiconductor and Storage
TK42E12N1,S1X
Toshiba Semiconductor and Storage
TK46E08N1,S1X
Toshiba Semiconductor and Storage
TK56E12N1,S1X
Toshiba Semiconductor and Storage
XC3S400-4TQG144C
Xilinx Inc.
XC2V1500-4FGG676I
Xilinx Inc.
APA450-BGG456
Microsemi Corporation
AGLN030V2-ZVQG100I
Microsemi Corporation
10M08SAU169A7G
Intel
5SGXEB5R3F43C3N
Intel
A42MX24-1TQG176
Microsemi Corporation
APA150-FGG144A
Microsemi Corporation
EP4SGX230DF29C3NES
Intel
EP20K1000CF33C7N
Intel