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Toshiba Semiconductor and Storage TK8A60DA(STA4,Q,M)

Name: TK8A60DA(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK8A60DA(STA4,Q,M)
Price: 1.16608 USD
Availability: InStock
Rating: 4.8 (181 reviews)

MFG Part Number: TK8A60DA(STA4,Q,M)

Available Quantity: 96540 Pieces

Reference Price: USD 1.16608

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: π-MOSVII MOSFET N-CH 600V 7.5A TO-220SIS

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TK8A60DA(STA4,Q,M).pdf

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TK8A60DA(STA4,Q,M) Specifications

Manufacturer Part Number	TK8A60DA(STA4,Q,M)
Future Part Number	FT-TK8A60DA(STA4,Q,M)
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	π-MOSVII
TK8A60DA(STA4,Q,M) Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TK8A60DA(STA4,Q,M) Weight	Contact Us
Replacement Part Number	TK8A60DA(STA4,Q,M)-FT

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