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Toshiba Semiconductor and Storage TK80S06K3L(T6L1,NQ

Name: TK80S06K3L(T6L1,NQ
Brand: Toshiba Semiconductor and Storage
SKU: TK80S06K3L(T6L1,NQ
Price: 0.7 USD
Availability: InStock
Rating: 4.9 (251 reviews)

MFG Part Number: TK80S06K3L(T6L1,NQ

Available Quantity: 57660 Pieces

Reference Price: USD 0.7

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSIV MOSFET N-CH 60V 80A DPAK-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TK80S06K3L(T6L1,NQ.pdf

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TK80S06K3L(T6L1,NQ Specifications

Manufacturer Part Number	TK80S06K3L(T6L1,NQ
Future Part Number	FT-TK80S06K3L(T6L1,NQ
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSIV
TK80S06K3L(T6L1,NQ Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 10V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TK80S06K3L(T6L1,NQ Weight	Contact Us
Replacement Part Number	TK80S06K3L(T6L1,NQ-FT

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