Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK7A65D(STA4,Q,M)
Manufacturer Part Number | TK7A65D(STA4,Q,M) |
---|---|
Future Part Number | FT-TK7A65D(STA4,Q,M) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | π-MOSVII |
TK7A65D(STA4,Q,M) Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 980 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK7A65D(STA4,Q,M) Weight | Contact Us |
Replacement Part Number | TK7A65D(STA4,Q,M)-FT |
TK32E12N1,S1X
Toshiba Semiconductor and Storage
TK3R1E04PL,S1X
Toshiba Semiconductor and Storage
TK14E65W5,S1X
Toshiba Semiconductor and Storage
TK100E10N1,S1X
Toshiba Semiconductor and Storage
TK100E06N1,S1X
Toshiba Semiconductor and Storage
TK100E08N1,S1X
Toshiba Semiconductor and Storage
TK40E06N1,S1X
Toshiba Semiconductor and Storage
TK34E10N1,S1X
Toshiba Semiconductor and Storage
TK22E10N1,S1X
Toshiba Semiconductor and Storage
TK40E10N1,S1X
Toshiba Semiconductor and Storage
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel