Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK55D10J1(Q)
Manufacturer Part Number | TK55D10J1(Q) |
---|---|
Future Part Number | FT-TK55D10J1(Q) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TK55D10J1(Q) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220(W) |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK55D10J1(Q) Weight | Contact Us |
Replacement Part Number | TK55D10J1(Q)-FT |
RDX080N50FU6
Rohm Semiconductor
RDX100N60FU6
Rohm Semiconductor
RDX120N50FU6
Rohm Semiconductor
RJK4002DPP-M0#T2
Renesas Electronics America
RJK4006DPP-M0#T2
Renesas Electronics America
RJK4007DPP-M0#T2
Renesas Electronics America
RJK5026DPP-M0#T2
Renesas Electronics America
RJL5012DPP-M0#T2
Renesas Electronics America
SPA03N60C3XKSA1
Infineon Technologies
SPA04N50C3XKSA1
Infineon Technologies
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel