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Toshiba Semiconductor and Storage TK50P03M1(T6RSS-Q)

Name: TK50P03M1(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK50P03M1(T6RSS-Q)
Price: 0.27144 USD
Availability: InStock
Rating: 4.9 (765 reviews)

MFG Part Number: TK50P03M1(T6RSS-Q)

Available Quantity: 99700 Pieces

Reference Price: USD 0.27144

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSVI-H MOSFET N-CH 30V 50A DP TO252-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TK50P03M1(T6RSS-Q).pdf

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TK50P03M1(T6RSS-Q) Specifications

Manufacturer Part Number	TK50P03M1(T6RSS-Q)
Future Part Number	FT-TK50P03M1(T6RSS-Q)
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSVI-H
TK50P03M1(T6RSS-Q) Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	25.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 10V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DP
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TK50P03M1(T6RSS-Q) Weight	Contact Us
Replacement Part Number	TK50P03M1(T6RSS-Q)-FT

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