Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK31V60W,LVQ
Manufacturer Part Number | TK31V60W,LVQ |
---|---|
Future Part Number | FT-TK31V60W,LVQ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | DTMOSIV |
TK31V60W,LVQ Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 15.4A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 240W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DFN-EP (8x8) |
Package / Case | 4-VSFN Exposed Pad |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK31V60W,LVQ Weight | Contact Us |
Replacement Part Number | TK31V60W,LVQ-FT |
TK45P03M1,RQ(S
Toshiba Semiconductor and Storage
TK560P65Y,RQ
Toshiba Semiconductor and Storage
TK60P03M1,RQ(S
Toshiba Semiconductor and Storage
TK6P60W,RVQ
Toshiba Semiconductor and Storage
TK6P65W,RQ
Toshiba Semiconductor and Storage
TK7P60W,RVQ
Toshiba Semiconductor and Storage
TK7P60W5,RVQ
Toshiba Semiconductor and Storage
TK7P65W,RQ
Toshiba Semiconductor and Storage
TK8P60W,RVQ
Toshiba Semiconductor and Storage
TK9P65W,RQ
Toshiba Semiconductor and Storage
LCMXO2-1200ZE-2TG144I
Lattice Semiconductor Corporation
XC3S1400AN-4FGG484C
Xilinx Inc.
10M08DCF484C8G
Intel
5SGXMB5R3F43C3N
Intel
5SGXMA7H3F35I3
Intel
LCMXO2280E-3B256C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-1FTG256C
Lattice Semiconductor Corporation
5AGTFC7H3F35I3G
Intel
EP1C4F400C8
Intel
EP20K200EBC356-1
Intel