Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK10Q60W,S1VQ
Manufacturer Part Number | TK10Q60W,S1VQ |
---|---|
Future Part Number | FT-TK10Q60W,S1VQ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | DTMOSIV |
TK10Q60W,S1VQ Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Stub Leads, IPak |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK10Q60W,S1VQ Weight | Contact Us |
Replacement Part Number | TK10Q60W,S1VQ-FT |
TK58E06N1,S1X
Toshiba Semiconductor and Storage
TK14E65W,S1X
Toshiba Semiconductor and Storage
TK10E60W,S1VX
Toshiba Semiconductor and Storage
TK12E60W,S1VX
Toshiba Semiconductor and Storage
TK16E60W5,S1VX
Toshiba Semiconductor and Storage
TK17E65W,S1X
Toshiba Semiconductor and Storage
TK20E60W,S1VX
Toshiba Semiconductor and Storage
TK25E60X,S1X
Toshiba Semiconductor and Storage
TK25E60X5,S1X
Toshiba Semiconductor and Storage
TK31E60W,S1VX
Toshiba Semiconductor and Storage
LCMXO2-1200ZE-2TG144I
Lattice Semiconductor Corporation
XC3S1400AN-4FGG484C
Xilinx Inc.
10M08DCF484C8G
Intel
5SGXMB5R3F43C3N
Intel
5SGXMA7H3F35I3
Intel
LCMXO2280E-3B256C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-1FTG256C
Lattice Semiconductor Corporation
5AGTFC7H3F35I3G
Intel
EP1C4F400C8
Intel
EP20K200EBC356-1
Intel