Home / Products / Integrated Circuits (ICs) / Memory / TH58NYG2S3HBAI4
Manufacturer Part Number | TH58NYG2S3HBAI4 |
---|---|
Future Part Number | FT-TH58NYG2S3HBAI4 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TH58NYG2S3HBAI4 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 63-BGA |
Supplier Device Package | 63-BGA (9x11) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TH58NYG2S3HBAI4 Weight | Contact Us |
Replacement Part Number | TH58NYG2S3HBAI4-FT |
W25Q16DVTCIG
Winbond Electronics
W25Q256FVCIF
Winbond Electronics
W25Q256FVCIF TR
Winbond Electronics
W25Q256FVCIG
Winbond Electronics
W25Q256FVCIG TR
Winbond Electronics
W25Q256FVCIP
Winbond Electronics
W25Q256FVCIP TR
Winbond Electronics
W25Q256FVCJQ
Winbond Electronics
W25Q256FVCJQ TR
Winbond Electronics
W25Q32FVTCIG
Winbond Electronics