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Toshiba Memory America, Inc. TH58NYG2S3HBAI4

MFG Part Number
TH58NYG2S3HBAI4
Available Quantity
67150 Pieces
Reference Price
USD 6.2
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Memory America, Inc.
Brief Description
- 4GB SLC NAND 24NM BGA 9X11 1.8V
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Memory
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TH58NYG2S3HBAI4.pdf
TH58NYG2S3HBAI4 Image

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TH58NYG2S3HBAI4 Specifications

Manufacturer Part Number TH58NYG2S3HBAI4
Future Part Number FT-TH58NYG2S3HBAI4
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
TH58NYG2S3HBAI4 Status (Lifecycle) In Stock
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gb (512M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time -
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-BGA
Supplier Device Package 63-BGA (9x11)
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TH58NYG2S3HBAI4 Weight Contact Us
Replacement Part Number TH58NYG2S3HBAI4-FT

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