Home / Products / Integrated Circuits (ICs) / Memory / TH58BYG3S0HBAI6
Manufacturer Part Number | TH58BYG3S0HBAI6 |
---|---|
Future Part Number | FT-TH58BYG3S0HBAI6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Benand™ |
TH58BYG3S0HBAI6 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 8Gb (1G x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | - |
Memory Interface | - |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | - |
Supplier Device Package | 67-VFBGA (6.5x8) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TH58BYG3S0HBAI6 Weight | Contact Us |
Replacement Part Number | TH58BYG3S0HBAI6-FT |
S99GL016A
Cypress Semiconductor Corp
S99GL01GP0609
Cypress Semiconductor Corp
S99GL032AB
Cypress Semiconductor Corp
S99GL032AU
Cypress Semiconductor Corp
S99GL064AB
Cypress Semiconductor Corp
S99GL064AU
Cypress Semiconductor Corp
S99GL064N0019
Cypress Semiconductor Corp
S99GL064N0030
Cypress Semiconductor Corp
S99GL064N90TFI060
Cypress Semiconductor Corp
S99GL08GT
Cypress Semiconductor Corp
A3P400-1FGG256
Microsemi Corporation
M2GL050S-1VFG400I
Microsemi Corporation
EPF10K10ATC100-3
Intel
EP4CE15F23C7
Intel
A1010B-1PL44I
Microsemi Corporation
XC2VP7-6FFG672I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LCMXO2-4000HE-5FTG256C
Lattice Semiconductor Corporation
5CGTFD7D5F31I7N
Intel
10AX115R1F40E1SG
Intel