Home / Products / Integrated Circuits (ICs) / Memory / TH58BYG2S3HBAI4
Manufacturer Part Number | TH58BYG2S3HBAI4 |
---|---|
Future Part Number | FT-TH58BYG2S3HBAI4 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Benand™ |
TH58BYG2S3HBAI4 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | - |
Voltage - Supply | - |
Operating Temperature | -40°C ~ 85°C |
Mounting Type | Surface Mount |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-TFBGA (9x11) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TH58BYG2S3HBAI4 Weight | Contact Us |
Replacement Part Number | TH58BYG2S3HBAI4-FT |
W25Q128FVCJQ
Winbond Electronics
W25Q128FVCJQ TR
Winbond Electronics
W25Q16DVTCIG
Winbond Electronics
W25Q256FVCIF
Winbond Electronics
W25Q256FVCIF TR
Winbond Electronics
W25Q256FVCIG
Winbond Electronics
W25Q256FVCIG TR
Winbond Electronics
W25Q256FVCIP
Winbond Electronics
W25Q256FVCIP TR
Winbond Electronics
W25Q256FVCJQ
Winbond Electronics
A3P030-2QNG68I
Microsemi Corporation
XC3S50A-5TQG144C
Xilinx Inc.
A3P250-2FG256I
Microsemi Corporation
A54SX32A-2PQG208I
Microsemi Corporation
5SGXMA3E1H29I2N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A40MX04-2PQG100I
Microsemi Corporation
10AX057K1F35I1SG
Intel
EPF10K50SQC240-1N
Intel
EP1S25F1020C7N
Intel