Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SUD42N03-3M9P-GE3
Manufacturer Part Number | SUD42N03-3M9P-GE3 |
---|---|
Future Part Number | FT-SUD42N03-3M9P-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SUD42N03-3M9P-GE3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3535pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 73.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUD42N03-3M9P-GE3 Weight | Contact Us |
Replacement Part Number | SUD42N03-3M9P-GE3-FT |
SI8816EDB-T2-E1
Vishay Siliconix
SI8802DB-T2-E1
Vishay Siliconix
SI8810EDB-T2-E1
Vishay Siliconix
SI8817DB-T2-E1
Vishay Siliconix
SI8823EDB-T2-E1
Vishay Siliconix
SI8445DB-T2-E1
Vishay Siliconix
SI8805EDB-T2-E1
Vishay Siliconix
SI8806DB-T2-E1
Vishay Siliconix
SI8466EDB-T2-E1
Vishay Siliconix
SI8461DB-T2-E1
Vishay Siliconix
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel