Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STH110N10F7-2
Manufacturer Part Number | STH110N10F7-2 |
---|---|
Future Part Number | FT-STH110N10F7-2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | DeepGATE™, STripFET™ VII |
STH110N10F7-2 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5117pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H2Pak-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
STH110N10F7-2 Weight | Contact Us |
Replacement Part Number | STH110N10F7-2-FT |
TSM024NA04LCR RLG
Taiwan Semiconductor Corporation
TSM025NB04CR RLG
Taiwan Semiconductor Corporation
TSM025NB04LCR RLG
Taiwan Semiconductor Corporation
TSM026NA03CR RLG
Taiwan Semiconductor Corporation
TSM033NA04LCR RLG
Taiwan Semiconductor Corporation
TSM033NB04CR RLG
Taiwan Semiconductor Corporation
TSM033NB04LCR RLG
Taiwan Semiconductor Corporation
TSM036N03PQ56 RLG
Taiwan Semiconductor Corporation
TSM048NB06LCR RLG
Taiwan Semiconductor Corporation
TSM055N03EPQ56 RLG
Taiwan Semiconductor Corporation
LFXP6E-4T144I
Lattice Semiconductor Corporation
XC6SLX16-N3FTG256C
Xilinx Inc.
AGLE3000V5-FG484
Microsemi Corporation
M1A3P250-1PQG208I
Microsemi Corporation
EP3C80F484C7N
Intel
10M50SCE144C8G
Intel
LCMXO2-7000HC-4BG256I
Lattice Semiconductor Corporation
EP1S80F1508C6
Intel
EPF8282ALC84-4
Intel
EPF10K130EQC240-3N
Intel