Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / STGW80H65DFB
Manufacturer Part Number | STGW80H65DFB |
---|---|
Future Part Number | FT-STGW80H65DFB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
STGW80H65DFB Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 240A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
Power - Max | 469W |
Switching Energy | 2.1mJ (on), 1.5mJ (off) |
Input Type | Standard |
Gate Charge | 414nC |
Td (on/off) @ 25°C | 84ns/280ns |
Test Condition | 400V, 80A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 85ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
STGW80H65DFB Weight | Contact Us |
Replacement Part Number | STGW80H65DFB-FT |
SGB02N120ATMA1
Infineon Technologies
SGB02N60ATMA1
Infineon Technologies
SGB06N60ATMA1
Infineon Technologies
SGB07N120ATMA1
Infineon Technologies
SGB10N60AATMA1
Infineon Technologies
SGB15N120ATMA1
Infineon Technologies
SGB15N60ATMA1
Infineon Technologies
SGB15N60HSATMA1
Infineon Technologies
SGB20N60ATMA1
Infineon Technologies
SGB30N60ATMA1
Infineon Technologies