Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / STGW25H120F2
Manufacturer Part Number | STGW25H120F2 |
---|---|
Future Part Number | FT-STGW25H120F2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
STGW25H120F2 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 100A |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 25A |
Power - Max | 375W |
Switching Energy | 600µJ (on), 700µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 29ns/130ns |
Test Condition | 600V, 25A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
STGW25H120F2 Weight | Contact Us |
Replacement Part Number | STGW25H120F2-FT |
SKB02N60E3266ATMA1
Infineon Technologies
SKB04N60ATMA1
Infineon Technologies
SKB06N60ATMA1
Infineon Technologies
SKB06N60HSATMA1
Infineon Technologies
SKB10N60AATMA1
Infineon Technologies
SKB15N60 E8151
Infineon Technologies
SKB15N60ATMA1
Infineon Technologies
SKB15N60HSATMA1
Infineon Technologies
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
TIG052TS-TL-E
ON Semiconductor
EP2C5T144C7
Intel
A3PN030-Z1QNG48
Microsemi Corporation
A3P1000-FGG256
Microsemi Corporation
AFS250-1FG256I
Microsemi Corporation
MPF300T-1FCVG484I
Microsemi Corporation
EP4CE22F17C8LN
Intel
XCKU5P-1FFVD900I
Xilinx Inc.
A54SX16A-2FGG144I
Microsemi Corporation
10AX115U4F45E3LG
Intel
5AGXFA7H4F35C5N
Intel