Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STB13N60M2
Manufacturer Part Number | STB13N60M2 |
---|---|
Future Part Number | FT-STB13N60M2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | MDmesh™ II Plus |
STB13N60M2 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
STB13N60M2 Weight | Contact Us |
Replacement Part Number | STB13N60M2-FT |
TSM120NA03CR RLG
Taiwan Semiconductor Corporation
TSM033NA03CR RLG
Taiwan Semiconductor Corporation
TSM020N04LCR RLG
Taiwan Semiconductor Corporation
TSM120N06LCR RLG
Taiwan Semiconductor Corporation
TSM160N10LCR RLG
Taiwan Semiconductor Corporation
TSM170N06PQ56 RLG
Taiwan Semiconductor Corporation
TSM650N15CR RLG
Taiwan Semiconductor Corporation
TSM061NA03CR RLG
Taiwan Semiconductor Corporation
TSM160P04LCRHRLG
Taiwan Semiconductor Corporation
TSM052N06PQ56 RLG
Taiwan Semiconductor Corporation
XC3S1600E-5FGG320C
Xilinx Inc.
XC3S250E-4VQ100I
Xilinx Inc.
M1AGL600V5-FG484I
Microsemi Corporation
LCMXO3LF-6900C-6BG400C
Lattice Semiconductor Corporation
EP4CGX50CF23C7
Intel
5SGXEA3K1F40C2L
Intel
5SGXMA3K2F40C2LN
Intel
5SGXEB6R3F43C2LN
Intel
XC6VLX195T-3FFG784C
Xilinx Inc.
5CGXFC4C7U19C8N
Intel