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Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F

Name: SSM6J213FE(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: SSM6J213FE(TE85L,F
Price: 0.0792 USD
Availability: InStock
Rating: 4.8 (12 reviews)

MFG Part Number: SSM6J213FE(TE85L,F

Available Quantity: 90100 Pieces

Reference Price: USD 0.0792

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSVI MOSFET P CH 20V 2.6A ES6

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SSM6J213FE(TE85L,F.pdf

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SSM6J213FE(TE85L,F Specifications

Manufacturer Part Number	SSM6J213FE(TE85L,F
Future Part Number	FT-SSM6J213FE(TE85L,F
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSVI
SSM6J213FE(TE85L,F Status (Lifecycle)	In Stock
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	103 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SSM6J213FE(TE85L,F Weight	Contact Us
Replacement Part Number	SSM6J213FE(TE85L,F-FT

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