Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SS1H9HE3_B/I
Manufacturer Part Number | SS1H9HE3_B/I |
---|---|
Future Part Number | FT-SS1H9HE3_B/I |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q100 |
SS1H9HE3_B/I Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 90V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 860mV @ 2A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1µA @ 90V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | SMA (DO-214AC) |
Operating Temperature - Junction | 175°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SS1H9HE3_B/I Weight | Contact Us |
Replacement Part Number | SS1H9HE3_B/I-FT |
JANTXV1N4942
Microsemi Corporation
JANTXV1N4944
Microsemi Corporation
JANTXV1N4946
Microsemi Corporation
JANTXV1N5186
Microsemi Corporation
JANTXV1N5415
Microsemi Corporation
JANTXV1N5416US
Microsemi Corporation
JANTXV1N5417US
Microsemi Corporation
JANTXV1N5418US
Microsemi Corporation
JANTXV1N5420US
Microsemi Corporation
JANTXV1N5550US
Microsemi Corporation
A54SX16P-2TQG144I
Microsemi Corporation
LCMXO2-1200ZE-1TG100I
Lattice Semiconductor Corporation
XC7K410T-2FBG676C
Xilinx Inc.
EP2AGX65DF25C5
Intel
5SGXMABN3F45I3N
Intel
5SGXMA5H2F35I3N
Intel
XCV50-5BG256I
Xilinx Inc.
A42MX09-TQG176I
Microsemi Corporation
LFEC20E-3FN672I
Lattice Semiconductor Corporation
5CGXFC7D6F31I7
Intel