Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SRA850HC0G
Manufacturer Part Number | SRA850HC0G |
---|---|
Future Part Number | FT-SRA850HC0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
SRA850HC0G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 700mV @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500µA @ 50V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SRA850HC0G Weight | Contact Us |
Replacement Part Number | SRA850HC0G-FT |
GPA806HC0G
Taiwan Semiconductor Corporation
GPA807 C0G
Taiwan Semiconductor Corporation
GPA807HC0G
Taiwan Semiconductor Corporation
MBR7100 C0G
Taiwan Semiconductor Corporation
MBR7100HC0G
Taiwan Semiconductor Corporation
MBR7150 C0G
Taiwan Semiconductor Corporation
MBR7150HC0G
Taiwan Semiconductor Corporation
MBR735 C0G
Taiwan Semiconductor Corporation
MBR735HC0G
Taiwan Semiconductor Corporation
MBR750 C0G
Taiwan Semiconductor Corporation
XC3SD3400A-4CS484C
Xilinx Inc.
XC2S50-6FG256C
Xilinx Inc.
M1A3P600-2FG484
Microsemi Corporation
A3P600-1FGG256
Microsemi Corporation
EP4SE360H29I3N
Intel
XC7K410T-3FFG900E
Xilinx Inc.
A42MX16-1TQG176M
Microsemi Corporation
LFE3-70EA-6FN672C
Lattice Semiconductor Corporation
EP2SGX60DF780C5N
Intel
EP1S40F1020I6N
Intel