Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQR40N10-25_GE3
Manufacturer Part Number | SQR40N10-25_GE3 |
---|---|
Future Part Number | FT-SQR40N10-25_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SQR40N10-25_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3380pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D2Pak) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQR40N10-25_GE3 Weight | Contact Us |
Replacement Part Number | SQR40N10-25_GE3-FT |
SIR640ADP-T1-GE3
Vishay Siliconix
SIR640DP-T1-GE3
Vishay Siliconix
SIR642DP-T1-GE3
Vishay Siliconix
SIR644DP-T1-GE3
Vishay Siliconix
SIR646DP-T1-GE3
Vishay Siliconix
SIR664DP-T1-GE3
Vishay Siliconix
SIR688DP-T1-GE3
Vishay Siliconix
SIR788DP-T1-GE3
Vishay Siliconix
SIR802DP-T1-GE3
Vishay Siliconix
SIR804DP-T1-GE3
Vishay Siliconix
ICE40UP5K-SG48I
Lattice Semiconductor Corporation
XC3S250E-5PQ208C
Xilinx Inc.
XC2V1000-5FGG456I
Xilinx Inc.
10CL010ZU256I8G
Intel
5SGXMA7K2F40I3
Intel
A54SX32A-1TQ100I
Microsemi Corporation
APA075-FGG144
Microsemi Corporation
10AX066N2F40I2SGES
Intel
EPF10K50VBC356-2N
Intel
EPF10K50VBI356-4
Intel