Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQM110P06-8M9L_GE3
Manufacturer Part Number | SQM110P06-8M9L_GE3 |
---|---|
Future Part Number | FT-SQM110P06-8M9L_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQM110P06-8M9L_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7450pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D²Pak) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQM110P06-8M9L_GE3 Weight | Contact Us |
Replacement Part Number | SQM110P06-8M9L_GE3-FT |
SIR168DP-T1-GE3
Vishay Siliconix
SIR172DP-T1-GE3
Vishay Siliconix
SIR330DP-T1-GE3
Vishay Siliconix
SIR401DP-T1-GE3
Vishay Siliconix
SIR403EDP-T1-GE3
Vishay Siliconix
SIR406DP-T1-GE3
Vishay Siliconix
SIR408DP-T1-GE3
Vishay Siliconix
SIR412DP-T1-GE3
Vishay Siliconix
SIR414DP-T1-GE3
Vishay Siliconix
SIR416DP-T1-GE3
Vishay Siliconix
A3P015-1QNG68
Microsemi Corporation
5SGXMA7N1F40C2N
Intel
5SGXEA7N1F45I2N
Intel
5SGXMB5R1F43C1N
Intel
EP4CGX15BF14I7N
Intel
XC6VLX195T-1FFG784I
Xilinx Inc.
XC2VP7-6FF672I
Xilinx Inc.
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4FG484I
Lattice Semiconductor Corporation
EP4SGX70HF35I3N
Intel