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Vishay Siliconix SQJQ466E-T1_GE3

Name: SQJQ466E-T1_GE3
Brand: Vishay Siliconix
SKU: SQJQ466E-T1_GE3
Price: 1.175056 USD
Availability: InStock
Rating: 4.6 (112 reviews)

MFG Part Number: SQJQ466E-T1_GE3

Available Quantity: 84490 Pieces

Reference Price: USD 1.175056

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: Automotive, AEC-Q101, TrenchFET® MOSFET N-CH 60V 200A POWERPAK8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SQJQ466E-T1_GE3.pdf

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SQJQ466E-T1_GE3 Specifications

Manufacturer Part Number	SQJQ466E-T1_GE3
Future Part Number	FT-SQJQ466E-T1_GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, TrenchFET®
SQJQ466E-T1_GE3 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10210pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SQJQ466E-T1_GE3 Weight	Contact Us
Replacement Part Number	SQJQ466E-T1_GE3-FT

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