Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQJ262EP-T1_GE3
Manufacturer Part Number | SQJ262EP-T1_GE3 |
---|---|
Future Part Number | FT-SQJ262EP-T1_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQJ262EP-T1_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 40A (Tc) |
Rds On (Max) @ Id, Vgs | 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V, 1260pF @ 25V |
Power - Max | 27W (Tc), 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ262EP-T1_GE3 Weight | Contact Us |
Replacement Part Number | SQJ262EP-T1_GE3-FT |
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