Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2361ES-T1_GE3
Manufacturer Part Number | SQ2361ES-T1_GE3 |
---|---|
Future Part Number | FT-SQ2361ES-T1_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQ2361ES-T1_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 177 mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 2W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQ2361ES-T1_GE3 Weight | Contact Us |
Replacement Part Number | SQ2361ES-T1_GE3-FT |
FDV301N
ON Semiconductor
NDS7002A
ON Semiconductor
2N7002K-T1-E3
Vishay Siliconix
BSS123
ON Semiconductor
FDN335N
ON Semiconductor
2N7002K-T1-GE3
Vishay Siliconix
TP0610K-T1-E3
Vishay Siliconix
2N7002K
ON Semiconductor
2N7002-TP
Micro Commercial Co
BSS84
ON Semiconductor
XC3S200-4FTG256I
Xilinx Inc.
XC4020XL-1PQ208C
Xilinx Inc.
M1AFS250-FG256
Microsemi Corporation
10M40DCF256C7G
Intel
5SGSED8K2F40I2N
Intel
XC2V2000-5FF896I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
A40MX04-PQG100M
Microsemi Corporation
LFEC15E-5F484C
Lattice Semiconductor Corporation
EP1SGX40GF1020I6
Intel