Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2309ES-T1_GE3
Manufacturer Part Number | SQ2309ES-T1_GE3 |
---|---|
Future Part Number | FT-SQ2309ES-T1_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQ2309ES-T1_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 336 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 (SOT-23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQ2309ES-T1_GE3 Weight | Contact Us |
Replacement Part Number | SQ2309ES-T1_GE3-FT |
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